Samsung Electronics is pushing to set up an additional 3D NAND flash memory plant in China. This will be Samsung's second NAND line in China following the first established in Xi'an in 2014. The second NAND line is likely to launch production from 2019.
This move is part of Samsung's strategy to maintain its leadership in the global NAND flash market, in a situation where its rivals SK Hynix and Micron Technology are beefing up investment in this area of business.
According to industry sources on May 28, Samsung is now in talks with China's local government to establish the second 3D NAND flash line in Xi'an which will have a monthly production output of tens of thousands wafers.
Sources close to the situation hinted that the ground for the new 3D NAND line would be broken within this year. According to market research firm Garter, the world's monthly 3D NAND chip output is forecast to rise from 250,000 units in late last year to 660,000 units this year.